Dry etching of CoFe films using a CH4/Ar inductively coupled plasma for magnetic random access memory application

作者：Um Doo Seung; Kim Dong Pyo; Woo Jong Chang; Kim Chang Il^*; Lee Sung Kwon; Jung Tae Woo; Moon Seung Chan

来源：Journal of Vacuum Science and Technology A, 2009, 27(4): 818-820.

DOI：10.1116/1.3155401

• argon
• cobalt alloys
• iron alloys
• metallic thin films
• MRAM devices
• organic compounds
• random-access storage
• sputter etching
• X-ray chemical analysis

In this study, the CoFe thin film was studied using an inductively coupled plasma system in CH4-based gas chemistries. The etch rate of the CoFe thin film was systemically studied by the process parameters including the gas mixing ratio, the rf power, the dc-bias power, and the process pressure. The best gas composition for etching was in CH4 (20%)/Ar (80%) ratio. As the rf power and the dc-bias voltage were increased, the etch rate of the CoFe thin film increased in a CH4/Ar inductively coupled plasma system. The best process pressure condition for etching was 10 mTorr in the CH4/Ar inductively coupled plasma system. The changes in the components on the surface of the CoFe thin film were investigated with energy dispersive x ray.

• 出版日期2009-7