Modification of the CdTe-In Interface by Irradiation with Nanosecond Laser Pulses through the CdTe Crystal

作者：Zelenska Kateryna S^*; Gnatyuk Dmytro V; Aoki Toru

来源：Journal of Laser Micro Nanoengineering, 2015, 10(3): 298-303.

DOI：10.2961/jlmn.2015.03.0011

• pulsed laser irradiation
• laser-induced doping
• temperature distribution
• metal-semiconductor interface
• p-n junction
• diode structure
• I-V characteristic
• X/gamma-ray detector

Laser processing of the CdTe-In semiconductor-metal interface has been studied by irradiation through the CdTe crystal in water using nanosecond pulses with lambda = 1064 nm. A thin In-doped CdTe layer adjacent to the In film was formed after direct laser impact on the CdTe-In interface. The fabricated In/CdTe/Au diode detectors with a p-n junction exhibited steep rectification and sensitivity to X/gamma-ray radiation. The simulation of laser-induced heating of the In film irradiated through the CdTe in water was performed. Temperature distribution inside the three-layer CdTe-In-Water structure at different moments under the action of nanosecond laser pulse was calculated.

• 出版日期2015-12