Analysis of periodic dislocation networks using x-ray diffraction and extended finite element modeling

作者：Winter**erger E^*; Hrauda N; Kriegner D; Keplinger M; Springholz G; Stangl J; Bauer G; Oswald J; Belytschko T; Deiter C; Bertram F; Seeck O H

来源：Applied Physics Letters, 2010, 96(13): 131905.

DOI：10.1063/1.3379298

• buffer layers
• cadmium compounds
• diffusion
• dislocation arrays
• epitaxial growth
• finite element analysis
• II-VI semiconductors
• IV-VI semiconductors
• lead compounds
• semiconductor epitaxial layers
• semiconductor growth
• short-range order
• X-ray diffraction

We combine the extended finite element method with simulations of diffracted x-ray intensities to investigate the diffusely scattered intensity due to dislocations. As a model system a thin PbSe epitaxial layer grown on top of a PbTe buffer on a CdTe substrate was chosen. The PbSe film shows a periodic dislocation network where the dislocations run along the orthogonal << 110 >> directions. The array of dislocations within this layer can be described by a short range order model with a narrow distribution.

• 出版日期2010-3-29
• 单位西北大学