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摘要
Ultrahigh energy storage density of 52.4 J cm(-3) with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multi-layers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.
- 出版日期2017-2-2
- 单位西安交通大学
