Analysis of the floating-gate transistor using the charge sheet model

作者：Medina Vazquez A S^*; Meda Campana M E; Gurrola Navarro M A; Becerra Alvarez E C; Lopez Delgadillo E

来源：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2016, 29(4): 675-685.

DOI：10.1002/jnm.2123

• MIFGMOS
• floating-gate
• model
• analog design
• low-voltage

The multiple-input floating-gate transistor is a semiconductor device that has found wide application in digital and analog electronic integrated circuits. Simulating an electronic circuit is an essential step in the design flow, prior to manufacturing. Therefore, an advanced model for the multiple-input floating-gate transistor is needed for analog design. This paper shows a method for adapting the charge sheet model for advanced models of the device. In addition, the problem of obtaining the drain to source current numerically as a function of external voltages is addressed. Furthermore, important plots are presented in order to clarify the behavior of the concerned device. The small signal analysis of the device is included. This summary may be interesting to those seeking to model the multiple-input floating-gate transistor, looking for alternatives to analog electronic design, needing low operating voltage, generating new design strategies, or wishing to understand of the operation of the device or the use of alternatives to implement analog circuits.

• 出版日期2016-8