Area-selectively sputtering the RuO(2) nanorods array

作者：Lee Wei Te; Tsai Dah Shyang^*; Chen Yi Ming; Huang Ying Sheng; Chung Wen Hung

来源：Applied Surface Science, 2008, 254(21): 6915-6921.

DOI：10.1016/j.apsusc.2008.04.108

• selective epitaxy
• physical vapor deposition
• nanomaterials
• oxides

The RuO(2) nanorods array is grown selectively on the SiO(2)-patterned sapphire (SA) wafers using reactive sputtering. The area-selectivity is attributed to an early nucleation of RuO(2) and its fast surface coverage on SA (1 0 0) and (0 1 2), in contrast to the sluggish nucleation on glassy SiO(2) in the initial sputtering period. The growth domain is explored by investigating the temperature windows at sputtering power 40, 50, and 60 W. The low-temperature bound is limited by the mobility of precursors on SiO(2) surface, which enables the precursors to depart before aggregating into a large size to smear the non-growth region. The high-temperature bound is set by the horizontal growth which enlarges the rod width and deteriorates its one-dimensional feature. The temperature window shrinks with increasing sputtering power. The X-ray photoelectron spectra indicate the as-sputtered rod surface is ruthenium rich. The Xray diffraction analysis shows that RuO(2) growth on SA (1 0 0) and (0 1 2) follows the epitaxial relations between RuO(2) and SA crystals.

• 出版日期2008-8-30