科研之友
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摘要
The effect of microstructural change on both magnetic and optical properties of Mn-implanted p-type GaN was studied. A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GAN and subsequently annealing. The magnetization measurement showed that the Curie temperature was the highest in the 800degreesC annealed sample due to the formation of Ga-Mn magnetic phases. The annealing at a higher temperature of 900degreesC produced antiferromagnetic Mn-N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies played a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. The photoluminescence peak at 2.92 eV became strong after annealing at 800degreesC, indicating an increase in hole concentration due to an enhanced activation of Mn impurities in p-type GAN. The intensity of Raman modes at 290 and 670 cm(-1), decreased drastically as annealing temperature increased (>800degreesC), due to the reduction in Mn-implantation-induced lattice imperfections. From this, it is proposed that the increase in magnetic properties of Mn-implanted GAN originated from the enhancement in the crystallinity as well as the production of Ga-Mn magnetic phases.
- 出版日期2003-6-1
