A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

作者：Yeh Mu Shih; Wu Yung Chun^*; Liu Kuan Cheng; Chung Ming Hsien; Jhan Yi Ruei; Hung Min Feng; Chen Lun Chun

来源：Nanoscale Research Letters, 2014, 9(1): 603.

DOI：10.1186/1556-276X-9-603

• Single poly Si
• Gate all around
• Junctionless
• Fin field effect transistor
• One time programming
• Nonvolatile memory
• Three-dimensional
• Flash memory

This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 10(4) s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.

• 出版日期2014-11-6
• 单位清华大学