科研之友
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摘要
This paper presents design, fabrication and calibration results for a novel 2-DOF capacitive force sensor capable of resolving forces up to 490 muN with a resolution of 0.01 muN in x, and up to 900 muN with a resolution of 0.24 muN in y. A simple fabrication process using deep reactive ion etching (DRIE) on silicon-on-insulator (SOT) wafers forms the 3D high aspect ratio structure. A transverse mode comb drive movement is used to greatly improve device sensitivity. Among other advantages of the developed process is a dice-free release of wafer structures, allowing fragile structures to be individually packaged. Notching or footing effects and bowing effects are well-known problems in DRIE on SOI wafers. Techniques to overcome notching and bowing effects using a Plasma Therm SLR-770 etcher are presented that do not require hardware modifications. The application of the force sensor is for providing real-time force feedback during individual cell manipulation tasks.
- 出版日期2002-11
