A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion

作者：Qin, Shengjun; Zhang, Jinyu^*; Fu, Di; Xie, Dan; Wang, Yan; Qian, He; Liu, Litian; Yu, Zhiping

来源：Nanoscale, 2012, 4(20): 6658-6663.

DOI：10.1039/c2nr31180a

• DIAMOND-LIKE CARBON
• MOLECULAR-DYNAMICS
• AMORPHOUS-CARBON
• CONDUCTION
• MECHANISM

The switching mechanism in carbon-based resistive-switching random access memory is modelled using a percolation approach built on the low-temperature transition between phases sp(3) (diamond-like and high-resistive state) and sp(2) (graphite-like and low-resistive state) for a matrix of carbon clusters in a diamond-like carbon film. The switching process is described using a random circuit breaker network with each breaker controlled by the resistance of clusters sp(2)/sp(3). The key feature of the proposed model is the thermal stress-induced transition from sp(2) to sp(3) phase and the electric field-induced transition from sp(3) to sp(2) phase. Compared with experiments on the switching biasing scheme, a good agreement between simulation and measured data validated the accuracy of the proposed model.

• 出版日期2012
• 单位清华大学