Analysis of read disturbance mechanism in retention of sub-20 nm NAND flash memory

作者：Kang Duckseoung^*; Lee Kyunghwan; Kwon Sangjin; Kim Shinhyung; Hwang Yuchul; Shin Hyungcheol

来源：Japanese Journal of Applied Physics, 2015, 54(4): 04DD03.

DOI：10.7567/JJAP.54.04DD03

We observed an increase of V-th by read disturbance mechanism at programmed threshold voltage state (PV1) and erase state (ERS) states in retention characteristics of sub-20 nm NAND flash main-chip. We also confirmed that the charge gain behavior by read disturbance has dependency on the number of read and cycling operations. As a result, we quantitatively modeled read disturbance mechanism by the amount of final Delta V-th and deterioration coefficient alpha which is related to the number of read operation times. It was also observed that those parameters increase with increasing cycling times and have larger value at ERS state than that at PV1 state.

• 出版日期2015-4