A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs

作者：Dutta Pradipta; Syamal Binit^*; Mohankumar Nagarajan; Sarkar Chandan Kumar

来源：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2014, 27(4): 682-690.

DOI：10.1002/jnm.1971

• asymmetric double gate
• threshold voltage
• 2-D Poisson%26apos
• s equation
• channel doping

In recent times, transistors with heavily doped body have generated much interest because of junctionless channel. In addition, proper threshold voltage regulation requires adjustment of the channel doping, as a result of which most of the compact models become invalid as they consider an intrinsic body. In this paper, a compact surface-potential-based threshold voltage model is developed for short channel asymmetric double-gate metal-oxide-semiconductor field-effect transistors with heavily/lightly doped channel. The 2-D surface potential is computed and compared with Technology Computer Aided Design, and a relative error of 2-4 % was obtained. The threshold voltage is solved from 2-D Poisson%26apos;s equation using virtual cathode%26apos; method, and a good agreement is observed with the numerical simulations. Also, the model is compared with a reference model and a better result is obtained for heavily doped channel.

• 出版日期2014-8