Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

作者：Krajewski T A^*; Luka G; Smertenko P S; Zakrzewski A J; Dybko K; Jakiela R; Wachnicki L; Gieraltowska S; Witkowski B S; Godlewski M; Guziewicz E

来源：Acta Physica Polonica, A, 2011, 120(6A): A17-A21.

The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.

• 出版日期2011-12