Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors

作者：Altazin Stephane; Clerc Raphael^*; Gwoziecki Romain; Boudinet Damien; Ghibaudo Gerard; Pananakakis Georges; Chartier Isabelle; Coppard Romain

来源：Organic Electronics, 2011, 12(6): 897-902.

DOI：10.1016/j.orgel.2011.03.007

• Organic thin film transistors
• Contact resistance
• Self-assembled monolayer
• Modeling

In this work, an analytical model of the contact resistance in top gate/bottom contacts organic thin film transistors has been derived. It combines both current crowding mechanism and an original model of the vertical accumulation of charges between channel and back electrode.
The experimental gate voltage dependency of the contact resistance has been found to be nicely reproduced by this model, without requiring any additional numerical simulations, empirical vertical resistivity formulas or specific injection/transport mechanisms. In addition, the experimental semiconductor thickness and metal work function dependencies of the contact resistance, not considered so far, have been found in excellent agreement with this model.

• 出版日期2011-6
• 单位中国地震局