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摘要
Tb-doped indium oxide (In2O3 : Tb) films were deposited on a GaN-based near-ultraviolet (NUV) light-emitting diode (LED) as a transparent conductive light converter to form a white LED. The transmittance of the In2O3 : Tb film (Tb at 10 wt%) exceeded 80% in visible light and the resistivity was 0.325 Omega cm. The In2O3 : Tb transparent conductive light converter was also employed on GaN-based LEDs. GaN-based NUV-LEDs with In2O3 : Tb film (Tb at 10 wt%) produced forward biases of 3.42V at an injection current of 20 mA. With increasing temperature, increasing Tb3+ concentration and increasing injection current from 20 to 100 mA, the chromaticity coordinates barely changed in the white light area. Therefore, the GaN-based NUV-LED with In2O3 : Tb film had a stable white light colour, when temperature and injection current changed, and is suitable for solid-state lighting.
- 出版日期2011-4-27
