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摘要
In this study, the p-type Ag-doped NiO films having Ag content of 4.23 at.% are deposited on glass substrate at ambient temperature by radio frequency (rf) sputtering of NiO-Ag composite target, with oxygen ion source assistance from ion gun. Then post-treatments are performed by Ar ion beam bombardment on the as-deposited Ag-doped NiO films in order to investigate the effect of Ar ion bombardment time on the structures and optoelectronic properties of the films. The electric resistivity is 1.9 x 10(-2)Omega-cm when the Ag-doped NiO film is obtained without Ar ion beam bombardment. For the first 20 min of ion bombardment, there is no markedly change in electric resistivity. However, it drops significantly to 8 x 10(-3) and 3 x 10(-3)Omega-cm when the bombardment time reaches 30 min and 40 min, respectively. On the other hand, the X-ray diffraction patterns show that the Ag-doped NiO films that are obtained without Ar ion beam bombardment only display weak NiO peaks. The crystallinity of NiO degrades significantly when the films are post bombarded with Ar ions. Furthermore, upon further increasing the Ar bombardment time to above 30 min, a (100) peak of Ni2O3 appears.
- 出版日期2016-4
- 单位长春大学
