Analytical description of avalanche photodiode characteristics. An overview: Part I

作者：Burlakov I D; Filachev A M; Kholodnov V A^*

来源：Journal of Communications Technology and Electronics, 2017, 62(9): 1027-1047.

DOI：10.1134/S1064226917090054

• impact generation of electron-hole pairs
• coefficients of collisional ionization and avalanche multiplication of carriers
• avalanche photodiodes
• APD
• avalanche breakdown field and voltage
• p-i-n structure
• p.n heterostructure
• avalanche heterophotodiode (AHPD)
• separated absorption and multiplication regions (SAMRs)
• interband tunnel current
• photosensitivity
• noise spectral density
• avalanche noise factor
• speed of operation
• classical and low-high-low types of the AHPD with SAMRs

The analytical model of avalanche photodiodes based on the different types of p-n structures is discussed. Formulas for avalanche breakdown voltage V (BD) and the exponent in Miller's relation for dependence between the carrier multiplication coefficient M and the applied voltage V are derived. The obtained results enable us to avoid time-consuming numerical calculations and develop an analytical method for optimizing the structural parameters of avalanche heterophotodiodes (its principles will be reported in Part II).

• 出版日期2017-9