科研之友
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摘要
Coalescence of droplets during reactive wetting is investigated for the liquid Ga/GaAs(001) system. In situ mirror electron microscopy reveals that coalescence predominantly involves the motion of one reactive droplet relative to the other. This behaviour differs significantly from coalescence in non-reactive systems and is associated with contact line pinning at a ridge/etch pit edge which is identified using atomic force microscopy and selective etching. A simple geometrical model is presented to describe the pinning.
- 出版日期2012-2-13
