科研之友
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摘要
ErSi2 nanowires were formed on Si(100) substrate by self-assembly. The wires were grown along the Si[011] and Si[0 (1) over bar1] directions. Samples perpendicular and parallel to the growth direction of the wires were cut using a focused ion beam system for cross-sectional investigation. It was revealed that single-crystal ErSi2 nanowires had been formed. However, the crystal orientation between the wires was different. Samples grown at different temperatures were also investigated to analyze the growth mechanism of the ErSi2 nanowires. The growth process from the initial state to form ErSi2 nanowires is discussed.
- 出版日期2008-6
- 单位RIKEN
