摘要

The nanoindentation time-dependent creep experiments with different peak loads are conducted on c-plane (0001), a-plane (11 (2) over bar0) and m-plane (10 (1) over bar0) of single-crystal ZnO. Under nano-scaled indentation, the creep behavior is crystalline orientation-dependent. For the creep on (0001), the stress exponent at low loads is similar to 1 and at high loads similar to 4. The stress exponents under all loads are within 3 similar to 7 for the creep on (11 (2) over bar0) and (10 (1) over bar0). This means that diffusion mechanism and dislocation mechanism is operative for different planes and loads. The relative difficulty of dislocations activation is an additional factor leading to the occurring of diffusion creep on the c-plane of single-crystal ZnO.