Development of dilute nitride materials for mid-infrared diode lasers

作者：Krier A^*; de la Mare M; Carrington P J; Thompson M; Zhuang Q; Patane A; Kudrawiec R

来源：Semiconductor Science and Technology, 2012, 27(9): 094009.

DOI：10.1088/0268-1242/27/9/094009

The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.

• 出版日期2012-9