A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

作者：Lu, Bin; Lu, Hongliang^*; Zhang, Yuming; Zhang, Yimen; Cui, Xiaoran; Lv, Zhijun; Yang, Shizheng; Liu, Chen

来源：IEEE Transactions on Electron Devices, 2018, 65(1): 299-307.

DOI：10.1109/TED.2017.2775341

• Capacitance model
• source depletion length
• terminal charges
• tunnel field-effect transistor (TFET)

Based on an analytical surface potential and a simple mathematical approximation for the source depletion width, a physics-based capacitance model with closed form for silicon double-gate tunnel field-effect transistors (TFETs) is developed. Good agreements between the proposed model and the numerical simulations have been achieved, which reveal that the tunneling carriers from source have negligible contribution to the channel charges and the gate capacitance can be almost acted as the gate drain capacitance, which is quite different from that of MOSFETs. This model without involving any iterative process is more SPICE friendly for circuit simulations compared with the table-lookup approach and would be helpful for developing the transient performance of TFET-based circuits.

• 出版日期2018-1
• 单位西安电子科技大学