High-performance calcium-doped zinc oxide thin-film transistors fabricated on glass at low temperature

作者：Yu, Wen; Han, Dedong^*; Cui, Guodong; Cong, Yingying; Dong, Junchen; Zhang, Xiaomi; Zhang, Xing; Wang, Yi; Zhang, Shengdong^*

来源：Japanese Journal of Applied Physics, 2016, 55(4): 04EK05.

DOI：10.7567/JJAP.55.04EK05

• ZNO TFTS
• GATE
• SEMICONDUCTORS
• STABILITY
• VOLTAGE

High-performance calcium-doped zinc oxide thin-film transistors (Ca-ZnO TFTs) have been successfully fabricated on transparent glass at low temperature by RF magnetron sputtering. To study the effects of calcium doping on zinc oxide thin-film transistors, the characteristics of Ca-ZnO TFTs and ZnO TFTs are compared and analyzed in detail from different perspectives, including electrical performance, surface morphology, and crystal structure of the material. The results suggest that the incorporation of calcium element can decrease the root-mean-square roughness of the material, suppress growth of a columnar structure, and improve device performance. The TFTs with Ca-ZnO active layer exhibit excellent electrical properties with the saturation mobility (mu(sat)) of 147.1 cm(2)V(-1)s(-1), threshold voltage (V-t) of 2.91V, subthreshold slope (SS) of 0.271V/dec, and I-on/I-off ratio of 2.34 x 108. In addition, we also study the uniformity of the devices. The experimental results show that the Ca-ZnO TFTs possess good uniformity, which is important for large-area application.

• 出版日期2016-4
• 单位北京大学深圳研究生院; 北京大学