Anomalous Capacitance Induced by GIDL in P-Channel LTPS TFTs

作者：Lin, Chia Sheng^*; Chen, Ying Chung; Chang, Ting Chang; Chen, Shih Ching; Jian, Fu Yen; Li, Hung Wei; Chen, Te Chih; Weng, Chi Feng; Lu, Jin; Hsu, Wei Che

来源：IEEE Electron Device Letters, 2009, 30(11): 1179-1181.

DOI：10.1109/LED.2009.2031504

• Displays
• low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)

In this letter, a mechanism of anomalous capacitance in p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) was investigated. In general, the effective capacitance was only the overlap region and independent with the frequency in LTPS TFTs under the OFF state. However, our experimental results reveal that the capacitance was related with the leakage current and that it was dependent with the measurement frequencies when operated at the OFF-state region. The increase of the capacitance value is verified to be due to the increase of the electron capacitance originating from a gate-induced drain-leakage (GIDL) one. Nevertheless, the GIDL-induced electron capacitance can be suppressed by employing band-to-band hot electron stress.

• 出版日期2009-11
• 单位中山大学