AC conductivity and dielectric properties of GeSexTl0.3 amorphous thin films

作者：Abd El Wahabb E^*; Abd El Aziz M M; Sharaf E R; Afifi M A

来源：Journal of Alloys and Compounds, 2011, 509(34): 8595-8600.

DOI：10.1016/j.jallcom.2011.06.038

• AC conductivity
• Dielectric properties

AC conductivity and dielectric properties have been studied for amorphous thin films with different thicknesses of glassy system GeSexTl0.3 with X = 3, 4 that prepared with thermal evaporation technique. The measurements are taken at temperature range (303-403 K) and frequency range (10(2)-10(5) Hz).
AC conductivity sigma(ac)(omega) is found to be proportional to omega(s) where s < 1. The temperature dependence of the ac conductivity and the parameter s can be discussed with the aim of the correlated barrier-hopping (CBH) model.
The dielectric constant epsilon' and the dielectric loss epsilon '' showed frequency and temperature dependence. The maximum barrier height W-M calculated from the dielectric measurements according to Giuntini equation are in good agreement with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in the case of chalcogenide glasses.

• 出版日期2011-8-25