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摘要
A physics-based compact model for double-gate polysilicon thin-film transistors (TFTs) with a doped channel is proposed in this paper. Through the effective charge density approach, the electrostatic potential is solved explicitly from the Poisson's equation without using the conventional regional approach. The resulting single-piece electrostatic potential equation, which does not consist of the intermediate parameter, offers clear physics meaning and good accuracy, particular when the TFT operates in the transition region. The TFT's drain current model is then developed by integrating the electrostatic potential equation analytically with the Pao-Sah equation. Finally, the model is verified by numerical and experimental data. Such a compact model is highly suitable for circuit simulations.
