摘要
Nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3 provides a pathway for reconfigurable, oxide-based nanoelectronics. Four-terminal transport measurements of LaAlO3/SrTiO3 nanowires at room temperature (T = 300 K) reveal an equivalent 2D Hall mobility greatly surpassing that of bulk SrTiO3 and approaching that of n-type Si nanowires of comparable dimensions. This large enhancement of mobility is relevant for room-temperature device applications.
- 出版日期2013-2