Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method

作者：Lu Jie^*; Thomas Chris I; Chandrashekhar M V S; Spencer Michael G

来源：Journal of Applied Physics, 2009, 105(10): 106108.

DOI：10.1063/1.3130398

• carrier density
• electrostatics
• polarisation
• semiconductor heterojunctions
• silicon compounds
• two-dimensional electron gas
• wide band gap semiconductors

A two-dimensional electron gas (2DEG) is observed in C-face 3C-SiC/6H-SiC polytype heterostructures by capacitance-voltage method. The carrier density of the 2DEG is found to be 2.5x10(12) cm(-2). By semiclassical analysis of the electrostatics, we extract the spontaneous polarization charge in 6H-SiC to be 3x10(12) cm(-2). This value quantitatively agrees well with previous measurements of the polarization charge in SiC.

• 出版日期2009-5-15