科研之友
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摘要
To increase the performances of amorphous silicon n-i-p solar cell, we investigate the possibility to enhance the built-in potential inserting thin high-conductivity chromium silicide layers at interfaces between metal electrodes and doped regions. We found that chromium silicide, formed on top of amorphous doped layer during chromium film evaporation, allows a reduction of activation energy of about 0.225 eV for n- and p-doped amorphous films. The activation energy reduction contributes to both built-in and open-circuit voltage enhancements, as demonstrated by comparing simulated and measured photovoltaic performances of n-i-p amorphous silicon solar cell with and without the chromium silicide layers.
- 出版日期2010-7
