An optically pumped 2.5 mu m GeSn laser on Si operating at 110 K

作者：Al Kabi Sattar; Ghetmiri Seyed Amir; Margetis Joe; Pham Thach; Zhou Yiyin; Dou Wei; Collier Bria; Quinde Randy; Du Wei^*; Mosleh Aboozar; Liu Jifeng; Sun Greg; Soref Richard A; Tolle John; Li Baohua; Mortazavi Mansour; Naseem Hameed A; Yu Shui Qing

来源：Applied Physics Letters, 2016, 109(17): 171105.

DOI：10.1063/1.4966141

This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an industry standard chemical vapor deposition reactor using the low cost commercially available precursors SnCl4 and GeH4 in a single run epitaxy process. Temperature-dependent characteristics of laser-output versus pumping-laser-input showed lasing operation up to 110 K. The 10 K lasing threshold and wavelength were measured as 68 kW/cm(2) and 2476 nm, respectively. Lasing characteristic temperature (T-0) was extracted as 65 K. Published by AIP Publishing.

• 出版日期2016-10-24