摘要

High-resolution transmission electron microscopy (HRTEM) is used to analyze the interface structure of hexagonal MnAs on cubic GaAs (110) grown by molecular beam epitaxy. By comparing the experimental HRTEM image with contrast simulation, we are able to determine the atomic configuration along the coherent part of the interface. The first two layers of MnAs on top of GaAs (110) are terminated by As atoms; the adjacent atoms across the interface are located directly on top of each other. The interface separation between the MnAs and GaAs lattices is measured to be 0.176 +/- 0.005 nm. On the basis of these results, a rigid lattice model of the heterointerface is proposed, whose simulated contrast patterns quantitatively correspond to the experimental HRTEM images of the interface.

  • 出版日期2011-1-20

全文