Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

作者：Mroczynski Robert^*; Taube Andrzej; Gieraltowska Sylwia; Guziewicz Elzbieta; Godlewski Marek

来源：Applied Surface Science, 2012, 258(21): 8366-8370.

DOI：10.1016/j.apsusc.2012.01.115

• Silicon oxynitride
• Hafnium dioxide
• Aluminum oxide
• Electrical characterization
• PECVD
• ALD
• Non-volatile semiconductor memories (NVSM)

The feasibility of the application of double-gate dielectric stacks with fabricated by atomic layer deposited (ALD) HfO2 and Al2O3 layers in non-volatile semiconductor memory (NVSM) devices was investigated. Significant improvement in retention at elevated temperatures after the application of ALD high-k oxides was demonstrated. Superior memory window (extrapolated at 10 years) of flat-band voltage (U-fb) value of the order of 2.6 V and 4.55 V at 85 degrees C, for stack with HfO2 and Al2O3, respectively, was obtained. Moreover, the analysis of conduction mechanisms in the investigated stacks under negative voltage revealed F-N tunneling in the range of high values of electric field intensity and lowering of barrier height with increasing temperature.

• 出版日期2012-8-15