ARW: Efficient Replacement Policies for Phase Change Memory and NAND Flash

作者：Zhang, Xi^*; Duan, Xinning; Yang, Jincui; Wang, Jingyuan

来源：IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS, 2017, E100D(1): 79-90.

DOI：10.1587/transinf.2016EDP7205

• replacement policy
• NAND flash
• phase change memory
• non-volatile memory
• emerging memory technology

The write operations on emerging Non-Volatile Memory (NVM), such as NAND Flash and Phase Change Memory (PCM), usually incur high access latency, and are required to be optimized. In this paper, we propose Asymmetric Read-Write (ARW) policies to minimize the write traffic sent to NVM. ARW policies exploit the asymmetry costs of read and write operations, and make adjustments on the insertion policy and hit-promotion policy of the replacement algorithm. ARW can reduce the write traffic to NVM by preventing dirty data blocks from frequent evictions. We evaluate ARW policies on systems with PCM as main memory and NAND Flash as disk. Simulation results on an 8-core multicore show that ARW adopted on the last-level cache (LLC) can reduce write traffic by more than 15% on average compared to LRU baseline. When used on both LLC and DRAM cache, ARW policies achieve an impressive reduction of 40% in write traffic without system performance degradation. When employed on the on-disk buffer of the Solid State Drive (SSD), ARW demonstrates significant reductions in both write traffic and overall access latency. Moreover, ARW policies are lightweight, easy to implement, and incur negligible storage and runtime overhead.

• 出版日期2017-1
• 单位北京航空航天大学; 北京邮电大学