科研之友
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摘要
A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p-i-n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid Ni-63 source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 x 2 mm(2) area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with Ni-63 source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.
