An 88.5-110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications

作者：Feng Guangyin^*; Boon Chirn Chye; Meng Fanyi^*; Yi Xiang; Li Chenyang

来源：IEEE Microwave and Wireless Components Letters, 2016, 26(2): 134-136.

DOI：10.1109/LMWC.2016.2517071

• CMOS amplifier
• gain distribution
• LNA
• millimeter-wave imaging
• millimeter-wave integrated circuits

This letter presents a wideband millimeter-wave low-noise amplifier (LNA) in a 65 nm CMOS technology. The amplifier adopts five-stage cascode topology with L-type input matching and T-type output matching. By distributing the peak gains of first four stages at two frequency points, the LNA achieves a flat gain response over a wide bandwidth. The measurement results show that the amplifier features a peak gain of 16.7 dB at 104 GHz, a minimum NF of 7.2 dB, and a 3 dB bandwidth of 21.5 GHz. The LNA consumes 48.6 mW and occupies a compact core area of 0.05 mm(2).

• 出版日期2016-2