Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

作者：Pociask M^*; Izhnin I I; Izhnin A I; Dvoretsky S A; Mikhailov N N; Sidorov Yu G; Varavin V S; Mynbaev K D

来源：Semiconductor Science and Technology, 2009, 24(2): 025031.

DOI：10.1088/0268-1242/24/2/025031

Ion milling was used to establish the minimum donor doping level N(md) required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy, un-doped and in situ doped with indium with the concentration N(In) = 5 x 10(14)-10(17) cm(-3). A study of the electrical properties of the milled films showed that Nmd comprised similar to 2 x 10(15) cm(-3) for the LWIR and similar to 5 x 10(15) cm(-3) for the MWIR films. In the films with NIn exceeding these critical values, the electron concentration after the milling strictly followed the doping. A need for consideration of the disintegration of the milling-induced defects is also shown.

• 出版日期2009-2