Atomic rearrangement of a sputtered MoS2 film from amorphous to a 2D layered structure by electron beam irradiation

作者：Kim Bong Ho; Gu Hyun Ho; Yoon Young Joon

来源：Scientific Reports, 2017, 7(1): 3874.

DOI：10.1038/s41598-017-04222-6

<jats:title>Abstract</jats:title><jats:p>We synthesised a crystalline MoS<jats:sub>2</jats:sub> film from as-sputtered amorphous film by applying an electron beam irradiation (EBI) process. A collimated electron beam (60 mm dia.) with an energy of 1 kV was irradiated for only 1 min to achieve crystallisation without an additional heating process. After the EBI process, we observed a two-dimensional layered structure of MoS<jats:sub>2</jats:sub> about 4 nm thick and with a hexagonal atomic arrangement on the surface. A stoichiometric MoS<jats:sub>2</jats:sub> film was confirmed to grow well on SiO<jats:sub>2</jats:sub>/Si substrates and include partial oxidation of Mo. In our experimental configuration, EBI on an atomically thin MoS<jats:sub>2</jats:sub> layer stimulated the transformation from a thermodynamically unstable amorphous structure to a stable crystalline nature with a nanometer grain size. We employed a Monte Carlo simulation to calculate the penetration depth of electrons into the MoS<jats:sub>2</jats:sub> film and investigated the atomic rearrangement of the amorphous MoS<jats:sub>2</jats:sub> structure.</jats:p>

• 出版日期2017-6-20