Scattering induced by Al segregation in AlGaN/GaN heterostructures

作者：Liu, Xiwen; Ji, Dong; Lu, Yanwu^*

来源：Applied Physics Letters, 2015, 107(7): 072105.

DOI：10.1063/1.4928932

• 2-DIMENSIONAL ELECTRON-GAS
• DISLOCATION SCATTERING
• MOBILITY
• HETEROJUNCTION

The effect of Al segregation near dislocations on the mobility of two-dimensional electron gas in AlGaN/GaN heterostructure-based high-electron-mobility transistors was investigated. Exponentially varied composition fluctuation was effective in describing Al segregation near dislocations when calculating scattering behavior. Mobility, which was limited by Al segregation surrounding dislocation lines, was calculated to be in the order of 10(3) cm(2)/Vs to 10(6) cm(2)/Vs. Results indicated that the mobility in AlGaN/GaN heterojunction was enhanced upon the reduction of dislocation density at low temperature. This study contributes to generating higher electron mobility in AlGaN/GaN heterojunctions.

• 出版日期2015-8-17
• 单位北京交通大学