Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector

作者：Assaad M^*; Boufouss E; Gerard P; Francis L; Flandre D

来源：Electronics Letters, 2012, 48(14): 842-843.

DOI：10.1049/el.2012.1279

Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high temperatures and radiations), it has been designed and manufactured using the 1 mu m high-temperature SOI-CMOS technology provided by X-FAB. The measured power dissipation of the TLD circuit is 9 mu W at a supply voltage of 5 V and temperature of 27 degrees C, according to the measurement results of the manufactured design.

• 出版日期2012-7-5