Hybrid n-GaN and polymer interfaces: Model systems for tunable photodiodes

作者：Kumar Prashant; Guha S; Shahedipour Sandvik F; Narayan K S^*

来源：Organic Electronics, 2013, 14(11): 2818-2825.

DOI：10.1016/j.orgel.2013.08.003

• Hybrid semiconductors
• Photodetector
• Polarization
• Photocurrent

Hybrid optoelectronic device structures offer promising options for a wide range of properties. The functioning of hybrid-bilayer devices is largely determined by their interface. Hybrid-bilayer devices based on wide band gap gallium nitride (GaN) and low band-gap donor/acceptor polymers offer a unique combination and model interface systems for application in photodetectors. A systematic study of the optoelectronic properties, specifically the photocurrent as a function of voltage bias and incident wavelength, has been carried out for n-Gan/polymer bilayer structures. A clear evidence of interface polarization originating from the GaN surface manifests in the current-voltage characteristics and photocurrent response of the hybrid structure.

• 出版日期2013-11