Aharonov Bohm effect in 2D topological insulator

作者：Gusev G M; Kvon Z D; Shegai O A^*; Mikhailov N N; Dvoretsky S A

来源：Solid State Communications, 2015, 205: 4-8.

DOI：10.1016/j.scc.2014.12.017

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov-Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm.

• 出版日期2015-3