BST patterned films prepared by direct patterning process and their properties

作者:Zhang Wei Hua*; Yuan Yuan; Shi Chun Mei; Zhao Gao Yang
来源:Journal of Inorganic Materials, 2008, 23(5): 886-890.
DOI:10.3724/SP.J.1077.2008.00886

摘要

The ultraviolet light photosensitive Ba0.8Sr0.2TiO3 (BST) sol and gel films were prepared by using chemical modification and modified sol-gel process with polyvinylpyrrolidone (PVP) as crack-suppressing agent, and acetylacetone (AcAcH) as chemical modifier agent which can associate metal-salt to form coordination chelate. The BST patterned gel films were prepared by direct patterning process. Then the BST patterned films with perovskite structure on Pt/TiO2/SiO2/Si substrate were obtained after subsequent heat treatment. The thickness of the BST patterned film is about 793nm, the dielectric constant and dielectric loss of the BST patterned film are about 600 and 0.03, respectively.

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