Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs

作者：Yeh Kuo Liang^*; Guo Jyh Chyurn

来源：IEEE Transactions on Electron Devices, 2013, 60(1): 109-116.

DOI：10.1109/TED.2012.2228196

• f(MAX)
• f(T)
• multifinger
• nanoscale CMOS
• narrow width
• N F-min
• RF noise
• R-g

The impact of narrow-width effects on high-frequency performance like f(T), f(MAX), and RF noise parameters, such as NFmin and R-n, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower R-g and higher f(MAX). However, these narrow-OD devices suffer f(T) degradation and higher NFmin, even with the advantage of lower R-g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

• 出版日期2013-1
• 单位中国科学院电工研究所