A novel sputtering oxidation coupling (SOC) method to fabricate VO2 thin film

作者：Xu, Xiaofeng^*; Yin, Anyuan; Du, Xiliang; Wang, Jiqing; Liu, Jiading; He, Xinfeng; Liu, Xingxing; Huan, Yilong

来源：Applied Surface Science, 2010, 256(9): 2750-2753.

DOI：10.1016/j.apsusc.2009.11.022

• VO2 thin films
• Sputtering oxidation coupling
• Metal-insulator transition

VO2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.

• 出版日期2010-2-15
• 单位中国科学院电工研究所; 东华大学; 华东师范大学; 复旦大学