A low onset voltage WORM type polymer memory based on functional PES

作者:Fang, Jiyong; Zhang, Haibo; Wei, Wei; Li, Yunxi; Yue, Xigui*; Jiang, Zhenhua
来源:Journal of Applied Polymer Science, 2015, 132(41): 42644.
DOI:10.1002/APP.42644

摘要

A high-performance polymer polyethersulfone (CN-Azo-PES), with a flexible ethoxyl linkage between the azobenzene chromophore side chain and the PES backbone, has been designed and successfully synthesized for an application in a WORM type memory device as an active polymer layer. CN-Azo-PES has excellent thermal properties with T-g of 151 degrees C and the degradation temperature higher than 373 degrees C, which can contribute to a better performance of the device. The device based on CN-Azo-PES exhibits a write-once read-many (WORM) type memory performance with an onset voltage as low as -1.0 V and an ON/OFF current ratio higher than 10(2) at a reading voltage of 0.4 V. Moreover, the data can be maintained for longer than 4 x 10(5) s once written and can be read for more than 400 cycles under a reading voltage of 0.4 V. Thus CN-Azo-PES can serve as an energy saving memory material in the data storage field of next generation.