High Carrier Mobility in Single Ultrathin Colloidal Lead Selenide Nanowire Field Effect Transistors

作者：Graham Rion; Yu Dong^*

来源：Nano Letters, 2012, 12(8): 4360-4365.

DOI：10.1021/nl302161n

• Colloidal
• nanowires
• mobility
• field effect transistors
• scanning photocurrent microscopy
• carrier diffusion length

Ultrathin colloidal lead selenide (PbSe) nanowires with continuous charge transport channels and tunable bandgap provide potential building blocks for solar cells and photodetectors. Here, we demonstrate a room-temperature hole mobility as high as 490 cm(2)/(V s) in field effect transistors incorporating single colloidal PbSe nanowires with diameters of 6-15 nm, coated with ammonium thiocyanate and a thin SiO2 layer. A long carrier diffusion length of 4.5 mu m is obtained from scanning photocurrent microscopy (SPCM). The mobility is increased further at lower temperature, reaching 740 cm(2)/(V s) at 139 K.

• 出版日期2012-8