Analytical Modeling of Potential and Drain Current for Symmetric Double Gate (SDG) MOSFET Using Self Consistent Solution of 1-D Poisson's-Schrodinger Equations

作者：Vishvakarma S K^*; Saxena A K; Dasgupta S

来源：Journal of Computational and Theoretical Nanoscience, 2010, 7(10): 1959-1964.

DOI：10.1166/jctn.2010.1567

• SDG MOSFET
• Self-Consistent Potential and Drain Current

In this paper, we have carried out an analytical modeling of Symmetric Double Date (SDG) MOSFET using self consistent solution of 1-D Poisson's-Schrodinger equations. Our modeling approach gives a self-consistent solution of potential and drain current with the modeling of threshold voltage and areal inversion charge density for SDG MOSFET. Various variation has been presented in this paper for the justification of model. For the purpose of verification and validation of our results obtained from our model has been compared and contrasted with the reported results.

• 出版日期2010-10