Diffusion Soldering of Pb-Doped GeTe Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

作者：Yang C L^*; Lai H J; Hwang J D; Chuang T H

来源：Journal of Electronic Materials, 2013, 42(3): 359-365.

DOI：10.1007/s11664-012-2345-6

• Diffusion soldering
• GeTe(Pb) thermoelectric modules
• intermetallic compounds
• bonding strength

Directly coating a GeTe(Pb) thermoelectric device with a Ni barrier layer and an Ag reaction layer and then diffusion soldering with a Cu electrode coated with Ag and Sn leads to breakage at the GeTe(Pb)/Ni interface and low bonding strengths of about 6 MPa. An improved process, precoating with 1 mu m Sn film and heating at 250A degrees C for 3 min before electroplating with Ni and Ag layers, results in satisfactory bonding strengths ranging from 12.6 MPa to 19.1 MPa. The precoated Sn film leads to the formation of a (Ni,Ge)(3)Sn-4 layer between the GeTe(Pb) thermoelectric material and Ni barrier layer, reducing the thermal stress at the GeTe(Pb)/Ni interface.

• 出版日期2013-3