N-2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature

作者：Omori Yuhei; Tabata Akimori^*; Kondo Akihiro

来源：Thin Solid Films, 2011, 519(14): 4535-4537.

DOI：10.1016/j.tsf.2011.01.314

• Hot-wire chemical vapor deposition
• Surface nitridation
• Silicon nitride
• Post-deposition treatment
• X-ray photoelectron spectroscopy

For nitride layer formation on a hydrogenated microaystalline silicon film surface, post-deposition treatments were carried out using a tungsten wire heated to 1700 degrees C in N-2 (12 Torr) or N-2/H-2 (4 Torr) atmospheres. The nitride layers were investigated with an X-ray photoelectron spectroscopy. The intense peaks due to the Si-N bonds were observed. Those in N-2 treatment were larger with increasing the treating time and decreased with depth direction, while those in N-2/H-2 treatment were virtually unchanged with the treating time and the depth up to about 20 nm. These findings indicate that even at a low wire temperature of 1700 degrees C, N-2 molecules decompose sufficiently and nitride layers can be formed when high gas pressures are used.

• 出版日期2011-5-2