摘要

The in-plane resistivity rho(ab)(T) and the out-of-plane rho(c)(T) have been extensively measured for pure single crystal Bi2Sr2CaCu2O8+delta(Bi2212) annealed at different oxygen pressures. The rho(c)(T) and anisotropy (rho(c)(T)/rho(ab)(T)) decrease rapidly with increasing carrier concentration. It is found that the out-of-plane resistivity decreases linearly with decreasing temperature down to about 120 K for the overdoped sample, its resistivity anisotropy is of weak temperature dependence.